Search results for "Light emitting diode"
showing 10 items of 20 documents
Impedance of space-charge-limited currents in organic light-emitting diodes with double injection and strong recombination
2006
The impedance model for a one-carrier space-charge-limited (SCL) current has been applied to explain some experimental features of double carrier organic light-emitting diodes. We report the analytical model of impedance of bipolar drift transport in SCL regime in the limit of infinite recombination. In this limit the ac impedance function is identical to that of a single carrier device, with a transit time modified by the sum of mobilities for electrons and holes, μn+μp. The static capacitance C(ω→0) is a factor of ¾ lower than the geometric capacitance, as observed for single carrier devices, but it is shifted to higher frequencies. It follows that impedance measurements in the dual-carri…
Exploring FPGA‐Based Lock‐In Techniques for Brain Monitoring Applications
2017
Functional near‐infrared spectroscopy (fNIRS) systems for e‐health applications usually suffer from poor signal detection, mainly due to a low end‐to‐end signal‐to‐noise ratio of the electronics chain. Lock‐in amplifiers (LIA) historically represent a powerful technique helping to improve performance in such circumstances. In this work a digital LIA system, based on a Zynq® field programmable gate array (FPGA) has been designed and implemented, in an attempt to explore if this technique might improve fNIRS system performance. More broadly, FPGA‐based solution flexibility has been investigated, with particular emphasis applied to digital filter parameters, needed in the digital LIA, and its …
Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence
2007
The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…
Large area perovskite light-emitting diodes by gas-assisted crystallization:
2019
Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N 2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m −2 and a current efficiency of 7.0 cd A −1 . We use this strategy to upscale PeLEDs to large-area substrates (230 cm 2 ) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 device…
New Electroactive Polymers with Electronically Isolated 4,7-Diarylfluorene Chromophores as Positive Charge Transporting Layer Materials for OLEDs
2021
The OLED materials were developed in the frame of project funded by the Research Council of Lithuania (grant No. S-LLT-19-2). B.Z. is thankful to the National Natural Science Foundation of China (No. 51773195), and the Research & Development Projects in Key Areas of Guangdong Province, China (No. 2019B010933001). We are also obliged to D. Volyniuk for measurements of the ionization potentials.
Degradation mechanisms in organic lead halide perovskite light-emitting diodes
2019
Organic–inorganic metal halide perovskites have attracted significant attention for low-cost, high-efficiency, color-pure light-emitting applications. However, as seen in many reports so-far, perovskite light-emitting diodes (PeLED) suffer from poor operational lifetime, limiting their practical use. The underlying degradation mechanism is a topic of crucial importance. Here, the degradation mechanisms of methylammonium lead bromide based PeLED are investigated. When the PeLED is electrically biased, there is an initial raise in the luminance followed by a rapid reduction in luminance and current density. Microscopic studies reveal the formation of micrometer-sized spots that are photolumin…
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
2003
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…
First InGaN/GaN thin Film LED using SiCOI engineered substrate
2006
InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…
Efficient Polymer Light‐Emitting Diode Using Air‐Stable Metal Oxides as Electrodes
2009
Poly(phenylenevinylene)‐based organic light‐emitting diodes (OLEDs) are fabricated using air‐stable metal oxides as electrodes, producing very efficient and bright electroluminescent devices. Efficiencies of 8 cd A−1 and luminances above 20000 cd m−2 are obtained, comparable to the values reported for classic OLED structures using reactive metals as cathodes.
Hybrid Inorganic‐Organic White Light Emitting Diodes
2020
This chapter reviews the state of the art of materials, technologies, characterizations, process and challenges concerning hybrid white light‐emitting diodes (LEDs). Here, for a “hybrid LED” we mean a device based on a layer of organic phosphors (or a mix of inorganic and organic ones) pumped by a high‐energy inorganic LED. Light is emitted by a frequency down‐conversion (sometimes simply named color‐conversion) process. Benefits and weak spots of this technology are investigated with a special attention for the materials involved into the process of frequency down‐conversion, in order to envisage the future impact of the hybrid lighting technology among the well‐established inorganic ones.